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In collaboration with Smiths Detection, CEA-Leti developed an innovative detection module for small-angle X-ray diffraction.

In Vitro System Bypasses -Complex Technical Setups- of Alternative Approaches And Supports Production Scaling e Interdisciplinary Research Institute of Grenoble (IRIG) , CEA-Leti and fellow European and Canadian institutes and researchers have demonstrated the complete vascularization of organoids on a microfluidic chip at speeds and flow rates similar to blood's, improving functional maturation and enabling their long-term survival.

Breakthrough Classifies Types of Arrhythmia Recordings With Precise Aleatoric and Epistemic Uncertainty - A team comprising CEA-Leti, CEA-List and two CNRS laboratories has published a new paper in Nature Communications presenting the first complete memristor-based Bayesian neural network implementation for a real-world task-classifying types of arrhythmia recordings with precise aleatoric and epistemic uncertainty.

Results Reported in Nature Article Suggest Vertical GeSn Transistors May Someday Enable Low-Power, High-Performance Chips and Quantum Computers C EA-Leti research scientists ha ve demonstrated that electrons and other charge carriers can move faster in germanium tin than in silicon or germanium, enabling lower operation voltages and smaller footprints in vertical than in planar devices.

Seven Papers Highlight Results with High-Level Integration of Technologies & Components for HPC/Edge-AI Chiplets, Optical Computing, Displays and Imagers - CEA-Leti will present new integration and packaging technologies for next-generation LiDAR optical-network driving devices in autonomous vehicles at the Electronic Components and Technology Conference , May 30-June 2, in Orlando, Fla.

Related Paper Covers Efficient Characterization Flow of Industrial Grade Si-Based Qubits Invited Paper Reports Breakthrough on Path Toward Cryogenic Compact Model CEA-Leti presented three papers at IEDM 2022 detailing its recent advances and future challenges in quantum computing using Si-based qubit devices with FDSOI technologies.

A CEA-Leti tutorial presented at IEDM 2022 highlighted promising advantages that resistive random-access memory (RRAM) technologies hold for implementing novel neuromorphic/in-memory computing systems for massively parallel, low-power and low-latency computation. In a presentation titled "Resistive Memories-Based Concepts for Neuromorphic Computing" , Elisa Vianello, CEA-Leti's edge AI program manager, said RRAMs, aka memristors, offer advantages in energy efficiency and computing power when processing AI workloads.

GRENOBLE, France - July 7, 2022 - Inspired by the barn owl's neuroanatomy, CEA-Leti has developed an event-driven, object-localization system that couples state-of-the-art piezoelectric, ultrasound transducer sensors to a neuromorphic, resistive memories-based computational map. Presented in a paper published recently in Nature Communications , the research team describes development of an auditory-processing system that increases energy efficiency by up to five orders of magnitude compared to conventional localization systems.

SAN FRANCISCO - Dec. CEA, in collaboration with CNRS Néel, a leading team in SI-based quantum c'omputing, presented two papers on that topic at IEDM 2021, including an invited paper that identifies the material and integration challenges facing large-scale Si quantum computing. The second paper presents a novel Si quantum device integration that reduces by half the effective gate pitch and provides full controllability in 1D FD-SOI quantum dot (QD) arrays.

SAN FRANCISCO 2021 - CEA-Leti has reported the world's-first demonstration of 16-kbit ferroelectric random-access memory (FeRAM) arrays at the 130nm node that advances this energy-saving technology closer to commercialization. The breakthrough includes back-end-of-line (BEOL) integration of TiN /HfO 2 :Si/TiN ferroelectric capacitors as small as 0.16 µm², and solder reflow compatibility for the first time for this type of memory.

In-memory energy is a supplemental feature to in-memory computing, which is a key focus in CEA-Leti's roadmap. It can reduce energy use dramatically because RRAM-based batteries are highly scalable and dynamically allocable, and they can be placed next to memory blocks, which are near the processor. Locating the energy supply close to the processor is especially helpful when the processor requires peak power, which typically comes from an external source.

Lensless Imaging System Affirms Phage Therapy's Value in Treating Serious Infection, Tracks Phage Resistance and Could Easily Be Implemented in Compact Devices at Phage Labs GRENOBLE, France - April 13, 2021 - A team of French and Swiss scientists has demonstrated a lensless imaging technique that could easily be implemented in cost-effective and compact devices in phage laboratories to accelerate phage-therapy diagnosis.

Presentations at Photonics West 2021 Show How Early-Stage Imaging System's Flexibility Can Be Applied Broadly in Medical Field GRENOBLE, France - March 18, 2021 - CEA-Leti scientists have developed a lensless, infrared spectral-imaging system for medical diagnostics. The first application is cancer detection in the tissue section and the second is the identification and discrimination of microorganisms, such as bacteria.

From Microscopic Holograms to New Optical Concepts and Design, the Institute Unveils Key Results Towards Integrated Retinal-Projection Displays -GRENOBLE, France - March 11, 2021 - Expanding on its previous advances in integrated optics and silicon photonics, CEA-Leti presented four related papers at Photonics West 2021 Digital Forum that show key steps toward improved AR capabilities with retinal projection.

J oin t Paper Presented at ISSCC 2021 Shows How New Adaptive Back-Biasing Technique O vercomes Integration Limits in Chip Design Flows CEA-Leti & Dolphin Design Report FD-SOI Breakthrough that Boosts Operating Frequency by 450% and Reduces Power Consumption by 30% GRENOBLE, France - Feb. CEA-Leti and Dolphin Design have developed an adaptive back-biasing (ABB) architecture for FD-SOI chips that can be seamlessly integrated in the digital design flow with industrial-grade qualification, overcoming integration drawbacks of existing ABB techniques.

GRENOBLE, France - Feb. CEA-Leti scientists have opened a pathway to large-scale integration of Si-spin qubits using existing flip-chip processes with die-to-wafer 3D-interconnect technologies developed in-house. In a paper presented during the 2020 Electronics System-Integration Technology Conference (ESTC), the team reported preliminary electrical characterizations at cryogenic temperatures of chip assemblies made with 3D interconnects such as SnAg microbumps and direct Cu bonded pads from Cu/SiO 2 hybrid bonding process.

World's First NEMS-Based Gyroscope Operates at 50 kHz, "Beyond Frequencies Of Vibrations Common" in Severe Environments GRENOBLE, France - Jan. CEA-Leti scientists, working with researchers at Politecnico di Milano, have developed the world's first high-performance gyroscope for operating in severe environments, such as industrial and aeronautic equipment and automobiles.

Article in Nature Electronics Details Method that Takes Advantage of RRAM Non- Idealities To Create Intelligent Systems that Have Potential Medical-Diagnostic Applications -GRENOBLE, France - Jan. CEA-Leti scientists have demonstrated a machine-learning technique exploiting what have been previously considered as "non-ideal" traits of resistive-RAM (RRAM) devices, overcoming barriers to developing RRAM-based edge-learning systems.

Papers at IEDM 2020 Explore Ways to Leverage 3D Technology's Strengths For Lowering Device Energy Consumption and Energy Lost in Data Transmission -GRENOBLE, France - Dec. CEA-Leti presented two papers this week at IEDM 2020 that confirm the advantages of combining 3D architectures and resistive-random-access-memories (RRAM) for in-memory computing (IMC), and their applications for Edge-AI and neural networks.

Gallium Nitride Seen as Highly Efficient Replacement for Silicon in Wide Range of Consumer and Industrial Uses GRENOBLE , France - Dec. Two complementary research papers from CEA-Leti confirmed that the institute's approach to gallium-nitride (GaN) technologies is on track overcome challenges in the architecture and performance of advanced GaN devices embedding a MOS gate, and targeting the fast-growing global market for power-conversion systems.